features low speed switching maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -3 a p c collector power dissipation 0.5 w r ? ja thermal resistance, junction to ambient 25 0 /w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a ,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 -5 v collector cut-off current i cbo v cb = -40v, i e =0 -1 a collector cut-off current i ceo v ce =-30v, i b =0 -10 a emitter cut-off current i ebo v eb =-6v, i c =0 -1 a dc current gain h fe v ce = -2v, i c = -1a 60 400 collector-emitter saturation voltage v ce(sat) i c =-2a, i b = -0.2a -0.5 v base-emitter saturation voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce = -5v, i c =-0.1a f =10mhz 80 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 1 2 3 sot-89 1. base 2. colletor 3. emitter 1 2 3 B772 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics B772 2 date:2011/05 www.htsemi.com semiconductor jinyu
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